摘要:本文报道了坩埚下降法生长大尺寸白宝石单晶。我们使用大尺寸异型钼坩埚,高纯氧化铝原料,在中性气氛下,结晶区温度梯度为25~30℃/cm,生长速度为0.8~1.8mm/h,生长方向选C面[0001]取向,成功生长出直径80mm,高度90mm的完整透明的白宝石单晶,在300~5500nm范围内,其光学透过率均在80%以上。实验中采用高性能保温材料使生长过程所需加热功率由20kW下降到15kW,能耗降低达25%;采用双回路加热系统,提高温场稳定性,缩短晶体生长周期。晶体的主要缺陷为顶部(生长后期)出现有5~10mm淡黄色色带(经在氧化性气氛中退火后已消除)和底部有细丝状条纹。
关键词:布里奇曼法;双回路加热系统;白宝石单晶
分类号:O782.5 文献标识码:A
文章编号:1000-985X(2000)01-0009-03

Investigation on Growth of Sapphire Crystals
by Vertical Bridgman Technique

FAN Zhi-da LI Nan HUANG Chao-en etc.
(Research Institute of Synthetic Crystals,Beijing 100018,China)
(Recieved 3 September 1999,accepted 18 November 1999)

Abstract:The perfect and full transparent sapphire crystals,80mm in diameter and 90mm in high have been successfully grown by means of vertical Bridgman technique.The two-loop heating equipment and Mo crucible 80mm in diameter have been adopted during the growth process.The parameters for crystal growth are typically as follows:temperature gradients next the interface are 25—30℃/cm,dropping rate is 0.8—1.8mm/h,the direction of crystallization is [0001];and energy-consuming is 15kW.Their transmission spectra have been measured.It has been found that the main defects in the sapphire crystal are pores,solid and yellow inclusions.Their formation cause has been approached briefly and some elimination or decrease measures have been given. So,the bases have been supplied for growth of higher quality and larger size sapphire crystals.
Key words:vertical Bridgman technical;two-loop heating;sapphire crystals▲

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坩埚下降法生长白宝石晶体的研究